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In-depth porosity control of mesoporous silicon layers by an anodization current adjustment
J. Lascaud 1
Author
Thomas Defforge 1
Mail :
Author IdHAL : thomas-defforge ORCID : https://orcid.org/0000-0002-2919-2144
Dominique Certon 1
Mail :
Author IdHAL : dominique-certon IdRef : https://www.idref.fr/13681803X ORCID : https://orcid.org/0000-0001-5963-7119
D. Valente 1
Author
Gaël Gautier 1
Mail :
Author IdHAL : gael-gautier IdRef : https://www.idref.fr/069994293 ORCID : https://orcid.org/0000-0002-6854-7040
1
GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (Bât. E, 20 avenue Monge, 37200 Tours - France)
- INSA CVL - Institut National des Sciences Appliquées - Centre Val de Loire (88 boulevard Lahitolle, CS 60013, 18022 Bourges cedex - France)
- Université de Tours (60 rue du Plat d'Étain, 37020 Tours cedex 1 - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7347 (France)
Document type :
Journal articles
Complete list of metadatas
https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:56 PM
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:56 PM
Identifiers
- HAL Id : hal-01741078, version 1
- DOI : 10.1063/1.4997228
Collections
UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL
Citation
J. Lascaud, Thomas Defforge, Dominique Certon, D. Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, American Institute of Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩
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