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Journal Articles Journal of Applied Physics Year : 2017

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Gael Gautier  : Connect in order to contact the contributor

https://hal-univ-tours.archives-ouvertes.fr/hal-01741078

Submitted on : Thursday, March 22, 2018-4:22:06 PM

Last modification on : Friday, January 14, 2022-5:10:02 PM

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hal-01741078 , version 1 (22-03-2018)

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Julie Lascaud, Thomas Defforge, Dominique Certon, Damien Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩

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