Journal Articles
Journal of Applied Physics
Year : 2017
Gael Gautier : Connect in order to contact the contributor
https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Submitted on : Thursday, March 22, 2018-4:22:06 PM
Last modification on : Friday, January 14, 2022-5:10:02 PM
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Julie Lascaud, Thomas Defforge, Dominique Certon, Damien Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩
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