In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Wednesday, December 12, 2018 - 3:31:41 PM

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J. Lascaud, Thomas Defforge, Dominique Certon, D. Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, American Institute of Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩

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