In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

J. Lascaud; Thomas Defforge; Dominique Certon; D. Valente; Gaël Gautier

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

J. Lascaud ¹ Thomas Defforge ¹ Dominique Certon ¹ D. Valente ¹ Gaël Gautier ¹

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Complete list of metadatas

https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Wednesday, December 12, 2018 - 3:31:41 PM

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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