In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

Julie Lascaud; Thomas Defforge; Dominique Certon; Damien Valente; Gaël Gautier

doi:10.1063/1.4997228

Journal articles

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

Julie Lascaud ¹ Thomas Defforge ¹ Dominique Certon ¹ Damien Valente ¹ Gaël Gautier ¹

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Contributor : Gael Gautier Connect in order to contact the contributor
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Friday, January 14, 2022 - 5:10:02 PM

In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

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