In-depth porosity control of mesoporous silicon layers by an anodization current adjustment

J. Lascaud 1 Thomas Defforge 1 Dominique Certon 1 D. Valente 1 Gaël Gautier 1
1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
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https://hal-univ-tours.archives-ouvertes.fr/hal-01741078
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 4:22:06 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:56 PM

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J. Lascaud, Thomas Defforge, Dominique Certon, D. Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, American Institute of Physics, 2017, 122 (21), ⟨10.1063/1.4997228⟩. ⟨hal-01741078⟩

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