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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , E. Frayssinet , Marc Portail , M Bah , N. Defrance , et al.
13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France
Communication dans un congrès hal-04038119v1
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Switchable DBR Filters Using Semiconductor Distributed Doped Areas (ScDDAs)

Rozenn Allanic , Denis Le Berre , Cédric Quendo , David Chouteau , Virginie Grimal , et al.
Electronics, 2021, 9 (12), ⟨10.3390/electronics9122021⟩
Article dans une revue hal-03174224v1
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H2MEMS Project: Resonant MEMS for detection of hydrogen release in radioactive waste disposal facility

Isabelle Dufour , Luis Iglesias Hernandez , Priyadarshini Shanmugam , Jean-François Michaud , Laurent Colin , et al.
Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF / IFCS 2022), Apr 2022, Paris, France
Communication dans un congrès hal-03778623v1

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah , Daniel Alquier , Marie Lesecq , Nicolas Defrance , Damien Valente , et al.
Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩
Article dans une revue hal-04378667v1
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Resonant MEMS for Gas Detection Based on the Measurements of Physical Properties of Gas Mixtures

Isabelle Dufour , Luis Iglesias Hernandez , Priyadarshini Shanmugam , Jean-François Michaud , Daniel Alquier , et al.
2020 Joint Conference of the IEEE International Frequency Control Symposium and the IEEE International Symposium on Applications of Ferroelectrics, Jul 2020, Keystone (virtual conference), United States. pp.1-3, ⟨10.1109/IFCS-ISAF41089.2020.9234908⟩
Communication dans un congrès hal-02481928v1

Band structure and polar distortion tuning at (La,Sr)MnO3 / (Ba,Sr)TiO3 interface

J. Wolfman , A. Ruyter , B. Negulescu , Pascal Andreazza , X. Wallart , et al.
IEEE ISAF 2022, Jun 2022, Tours (FR), France
Communication dans un congrès hal-04485893v1
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
Scientific Reports, 2020, 10 (1), pp.14166. ⟨10.1038/s41598-020-71064-0⟩
Article dans une revue hal-02929022v1
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On-Chip Polarization Reconfigurable Microstrip Patch Antennas Using Semiconductor Distributed Doped Areas (ScDDAs)

Rozenn Allanic , Denis Le Berre , Cédric Quendo , Douglas Silva de Vasconcellos , Virginie Grimal , et al.
Electronics, 2022, 11 (12), pp.1905. ⟨10.3390/electronics11121905⟩
Article dans une revue hal-03762865v1
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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq , Eric Frayssinet , Marc Portail , Micka Bah , N. Defrance , et al.
Materials Science Forum, 2022, 1062, pp.482-486. ⟨10.4028/p-2wi7o8⟩
Article dans une revue hal-03741438v1
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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Yassine Fouzi , Ali Abboud , N. Defrance , Francois Vaurette , et al.
Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩
Article dans une revue hal-04084512v1
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Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy

Micka Bah , Damien Valente , Marie Lesecq , N. Defrance , Maxime Garcia Barros , et al.
Wocsdice Exmatec 2021, Jun 2021, Bristol (virtual), United Kingdom. pp.131-132
Communication dans un congrès hal-03284079v1
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On-Chip Bandstop to Bandpass Reconfigurable Filters Using Semiconductor Distributed Doped Areas (ScDDAs)

Rozenn Allanic , Fabien Le Borgne , Hassan Bouazzaoui , Denis Le Berre , Cédric Quendo , et al.
Electronics, 2022, 11 (20), pp.3420. ⟨10.3390/electronics11203420⟩
Article dans une revue hal-04140870v1

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq , Y. Fouzi , A. Abboud , N. Defrance , Francois Vaurette , et al.
European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland
Communication dans un congrès hal-04039596v1