Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band - Archive ouverte HAL Access content directly
Journal Articles Nanotechnology Year : 2020

Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band

, (1) , , ,
1
Sumin Choi
  • Function : Author
Valery Davydov
  • Function : Author
Ludmila Kulikova
  • Function : Author
Taras Plakhotnik
  • Function : Author
Not file

Dates and versions

hal-03192261 , version 1 (07-04-2021)

Identifiers

Cite

Sumin Choi, Viatcheslav Agafonov, Valery Davydov, Ludmila Kulikova, Taras Plakhotnik. Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV − photoluminescence band. Nanotechnology, 2020, 31 (20), pp.205709. ⟨10.1088/1361-6528/ab72bb⟩. ⟨hal-03192261⟩
43 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More