A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Guillaume Gomme; Gaël Gautier; Marc Portail; Eric Frayssinet; Daniel Alquier; Yvon Cordier; Fabrice Semond

doi:10.1002/pssa.201600450

Journal articles

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Guillaume Gomme Gaël Gautier ¹ Marc Portail ² Eric Frayssinet ² Daniel Alquier ¹ Yvon Cordier ² Fabrice Semond ²

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat]

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

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https://hal-univ-tours.archives-ouvertes.fr/hal-02152388
Contributor : Gael Gautier Connect in order to contact the contributor
Submitted on : Tuesday, June 11, 2019 - 2:03:00 PM
Last modification on : Thursday, August 4, 2022 - 5:05:49 PM

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

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A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

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