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Journal Articles physica status solidi (a) Year : 2017

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

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Physics [physics] Condensed Matter [cond-mat] Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

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https://hal-univ-tours.archives-ouvertes.fr/hal-02152388

Submitted on : Tuesday, June 11, 2019-2:03:00 PM

Last modification on : Thursday, August 4, 2022-5:05:49 PM

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hal-02152388 , version 1 (11-06-2019)

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Guillaume Gomme, Gaël Gautier, Marc Portail, Eric Frayssinet, Daniel Alquier, et al.. A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate. physica status solidi (a), 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩. ⟨hal-02152388⟩

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