A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Guillaume Gomme Gaël Gautier 1 Marc Portail 2 Eric Frayssinet 2 Daniel Alquier 1 Yvon Cordier 2 Fabrice Semond 2
1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
2 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
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https://hal-univ-tours.archives-ouvertes.fr/hal-02152388
Contributor : Gael Gautier <>
Submitted on : Tuesday, June 11, 2019 - 2:03:00 PM
Last modification on : Wednesday, June 12, 2019 - 1:26:04 AM

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UNIV-TOURS | UNICE | GREMAN | UNIV-COTEDAZUR | INSA-GROUPE

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Guillaume Gomme, Gaël Gautier, Marc Portail, Eric Frayssinet, Daniel Alquier, et al.. A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate. physica status solidi (a), Wiley, 2017, 214 (4), pp.1600450. ⟨10.1002/pssa.201600450⟩. ⟨hal-02152388⟩

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