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Journal Articles Applied Physics Letters Year : 2018

Metal-insulator transition in V 2 O 3 thin film caused by tip-induced strain

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Abstract

We have demonstrated pressure-induced transition in a c-axis oriented V2O3 thin film from strongly correlated metal to Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-gigapascal, a tip with a large radius of 335 nm was prepared by chemical vapour deposition of platinum onto a commercial tip with a focused ion beam (FIB). The FIB-modified tip gives a good electrical contact at low working pressures (0.25-0.4 GPa) allowing unambiguously to evidence reversible metalinsulator transition in a pulsed laser-deposited V2O3 thin film by means of local investigations of current-voltage characteristics. A finite element method has confirmed that the diminution of c/a ratio under this tip pressure explains the observed phase transition of the electron density of states in the film.
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Dates and versions

hal-02014824 , version 1 (10-11-2022)

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Natalia Alyabyeva, Joe Sakai, M. Bavencoffe, J. Wolfman, P. Limelette, et al.. Metal-insulator transition in V 2 O 3 thin film caused by tip-induced strain. Applied Physics Letters, 2018, 113 (24), pp.241603. ⟨10.1063/1.5063712⟩. ⟨hal-02014824⟩
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