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Thickness dependence of the electronic properties in V2O3 thin films

Abstract : High quality vanadium sesquioxide V 2 O 3 films 170-1100 Å were grown using the pulsed laser deposition technique on 0001-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter a, close to −3.5% with respect to the substrate and an out-of-plane tensile lattice parameter c. The thin film samples display metallic character between 2 and 300 K, and no metal-to-insulator transition is observed. At low temperature, the V 2 O 3 films behave as a strongly correlated metal, and the resistivity follows the equation = 0 + AT 2 , where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 cm K −2 , which is in agreement with the coefficient reported for V 2 O 3 single crystals under high pressure. Moreover, a strong temperature dependence of the Hall resistance confirms the electronic correlations of these V 2 O 3 thin film samples.
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C. Grygiel, Ch. Simon, B. Mercey, W. Prellier, R. Fresard, et al.. Thickness dependence of the electronic properties in V2O3 thin films. Applied Physics Letters, American Institute of Physics, 2007, 91 (26), pp.262103. ⟨10.1063/1.2824465⟩. ⟨hal-01870065⟩



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