Thickness dependence of the electronic properties in V2O3 thin films - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2007

Thickness dependence of the electronic properties in V2O3 thin films

(1, 2) , (2) , (2) , (2) , (2) , (3)
1
2
3

Abstract

High quality vanadium sesquioxide V 2 O 3 films 170-1100 Å were grown using the pulsed laser deposition technique on 0001-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter a, close to −3.5% with respect to the substrate and an out-of-plane tensile lattice parameter c. The thin film samples display metallic character between 2 and 300 K, and no metal-to-insulator transition is observed. At low temperature, the V 2 O 3 films behave as a strongly correlated metal, and the resistivity follows the equation = 0 + AT 2 , where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 cm K −2 , which is in agreement with the coefficient reported for V 2 O 3 single crystals under high pressure. Moreover, a strong temperature dependence of the Hall resistance confirms the electronic correlations of these V 2 O 3 thin film samples.
Fichier principal
Vignette du fichier
limelette-2007-APL-91-262103.pdf (240 Ko) Télécharger le fichier
Origin : Publisher files allowed on an open archive
Loading...

Dates and versions

hal-01870065 , version 1 (07-09-2018)

Identifiers

Cite

C. Grygiel, Ch. Simon, B. Mercey, W. Prellier, R. Fresard, et al.. Thickness dependence of the electronic properties in V2O3 thin films. Applied Physics Letters, 2007, 91 (26), pp.262103. ⟨10.1063/1.2824465⟩. ⟨hal-01870065⟩
78 View
325 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More