Strain-induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide $V_{2}$$ O_{3}$

Abstract : $V_{2}$$ O_{3}$ thin films about 1000 Å thick were grown on $Al_{2}$$ O_{3}$ 0001 by pulsed laser deposition. The x-ray diffraction analysis is in agreement with the R-3c space group. Some of them exhibit the metal/insulator transition characteristic of $V_{2}$$ O_{3}$ bulk material and other samples exhibit a metallic behavior. For the latter, the x-ray photoelectron spectroscopy analysis indicates an oxidation state of +III for vanadium. There is no metal/insulator transition around 150 K in this sample and a strongly correlated Fermi liquid A $T^{2}$ behavior of the resistivity at low temperature is observed, with a value of A of 1.2 $10^{−4}$ cm, three times larger than the bulk value at 25 kbar.
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S. Autier-Laurent, B. Mercey, D. Chippaux, P. Limelette, Ch. Simon. Strain-induced pressure effect in pulsed laser deposited thin films of the strongly correlated oxide $V_{2}$$ O_{3}$. Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 74 (19), pp.195109. ⟨10.1103/PhysRevB.74.195109⟩. ⟨hal-01870059⟩

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