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Simulated 1200V SiC-MOSFET short-circuit behavior

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hal-01862351 , version 1 (27-08-2018)

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  • HAL Id : hal-01862351 , version 1

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Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. ⟨hal-01862351⟩
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