Simulated 1200V SiC-MOSFET short-circuit behavior

Guillaume Goubard; Zheng Ren; Nathalie Batut; Ambroise Schellmanns

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Simulated 1200V SiC-MOSFET short-circuit behavior

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1

Guillaume Goubard

Function : Author

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Zheng Ren

Function : Author

Nathalie Batut

Function : Author
PersonId : 20959
IdHAL : nathalie-batut
IdRef : 061777366

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

CV

Ambroise Schellmanns

Function : Author
PersonId : 20961
IdHAL : ambroise-schellmanns
IdRef : 164687610

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

CV

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

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https://hal-univ-tours.archives-ouvertes.fr/hal-01862351

Submitted on : Monday, August 27, 2018-12:07:00 PM

Last modification on : Friday, January 14, 2022-5:10:02 PM

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hal-01862351 , version 1 (27-08-2018)

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HAL Id : hal-01862351 , version 1

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Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. ⟨hal-01862351⟩

Simulated 1200V SiC-MOSFET short-circuit behavior

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