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Simulated 1200V SiC-MOSFET short-circuit behavior

Guillaume Goubard 1 Zheng Ren Nathalie Batut 1 Ambroise Schellmanns 1 
1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
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Conference papers
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https://hal-univ-tours.archives-ouvertes.fr/hal-01862351
Contributor : ambroise schellmanns Connect in order to contact the contributor
Submitted on : Monday, August 27, 2018 - 12:07:00 PM
Last modification on : Friday, January 14, 2022 - 5:10:02 PM

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  • HAL Id : hal-01862351, version 1

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UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL

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Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. ⟨hal-01862351⟩

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