Simulated 1200V SiC-MOSFET short-circuit behavior

Complete list of metadatas

https://hal-univ-tours.archives-ouvertes.fr/hal-01862351
Contributor : Ambroise Schellmanns <>
Submitted on : Monday, August 27, 2018 - 12:07:00 PM
Last modification on : Wednesday, December 12, 2018 - 3:15:23 PM

Identifiers

  • HAL Id : hal-01862351, version 1

Collections

Citation

Guillaume Goubard, Zheng Ren, Nathalie Batut, Ambroise Schellmanns. Simulated 1200V SiC-MOSFET short-circuit behavior. icrepq2018, Mar 2018, Salamanca, Spain. ⟨hal-01862351⟩

Share

Metrics

Record views

46