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Pulsed laser-deposited VO 2 thin films on Pt layers

Abstract : VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.
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Submitted on : Thursday, May 17, 2018 - 3:26:49 PM
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Joe Sakai, Mustapha Zaghrioui, Vinh Ta Phuoc, Sylvain Roger, Cecile Autret, et al.. Pulsed laser-deposited VO 2 thin films on Pt layers. Journal of Applied Physics, American Institute of Physics, 2013, 113 (12), pp.123503. ⟨10.1063/1.4795813⟩. ⟨hal-01794471⟩



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