Skip to Main content Skip to Navigation
Journal articles

Pulsed laser-deposited VO 2 thin films on Pt layers

Abstract : VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.
Complete list of metadatas
Contributor : Vinh Ta Phuoc <>
Submitted on : Thursday, May 17, 2018 - 3:26:49 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:55 PM




Joe Sakai, Mustapha Zaghrioui, Vinh Ta Phuoc, Sylvain Roger, Cecile Autret, et al.. Pulsed laser-deposited VO 2 thin films on Pt layers. Journal of Applied Physics, American Institute of Physics, 2013, 113 (12), pp.123503. ⟨10.1063/1.4795813⟩. ⟨hal-01794471⟩



Record views