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Journal articles
Integration of low-loss inductors on thin porous silicon membranes
Benjamin Bardet 1
Author
S. Desplobain
Author
Jérôme Billoue 1
Author Employer institution : GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) IdHAL : jerome-billoue ORCID : https://orcid.org/0000-0002-0034-1302
Laurent Ventura 1
Author
Gaël Gautier 1
Author IdHAL : gael-gautier IdRef : https://www.idref.fr/069994293 ORCID : https://orcid.org/0000-0002-6854-7040
1
GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (Bât. E, 20 avenue Monge, 37200 Tours - France)
- Université de Tours (60 rue du Plat d'Étain, 37020 Tours cedex 1 - France)
- INSA CVL - Institut National des Sciences Appliquées - Centre Val de Loire (88 boulevard Lahitolle, CS 60013, 18022 Bourges cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7347 (France)
Document type :
Journal articles
Complete list of metadata
https://hal-univ-tours.archives-ouvertes.fr/hal-01771559
Contributor : Jérôme Billoué Connect in order to contact the contributor
Submitted on : Thursday, April 19, 2018 - 3:48:47 PM
Last modification on : Wednesday, April 8, 2020 - 7:16:02 PM
Contributor : Jérôme Billoué Connect in order to contact the contributor
Submitted on : Thursday, April 19, 2018 - 3:48:47 PM
Last modification on : Wednesday, April 8, 2020 - 7:16:02 PM
Identifiers
- HAL Id : hal-01771559, version 1
- DOI : 10.1016/j.mee.2018.03.020
Collections
UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL
Citation
Benjamin Bardet, S. Desplobain, Jérôme Billoue, Laurent Ventura, Gaël Gautier. Integration of low-loss inductors on thin porous silicon membranes. Microelectronic Engineering, Elsevier, 2018, 194, pp.96 - 99. ⟨10.1016/j.mee.2018.03.020⟩. ⟨hal-01771559⟩
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