Journal Articles
IEEE Transactions on Electron Devices
Year : 2018
Gael Gautier : Connect in order to contact the contributor
https://hal-univ-tours.archives-ouvertes.fr/hal-01740927
Submitted on : Thursday, March 22, 2018-3:10:15 PM
Last modification on : Friday, January 14, 2022-5:10:02 PM
Cite
Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩
Collections
60
View
0
Download