Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC - Archive ouverte HAL

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Journal Articles IEEE Transactions on Electron Devices Year : 2018

Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC

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2
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Bin Lu

Function : Author

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Samuel Menard

Function : Author
PersonId : 960017

STMicroelectronics [Tours]

Benjamin Morillon

Function : Author
PersonId : 754334
IdHAL : benjamin-morillon
ORCID : 0000-0002-0049-064X
IdRef : 160181399

STMicroelectronics

Daniel Alquier

Function : Author
PersonId : 18459
IdHAL : daniel-alquier
ORCID : 0000-0003-1345-8195
IdRef : 128188308

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Gael Gautier

Function : Author
PersonId : 18457
IdHAL : gael-gautier
ORCID : 0000-0002-6854-7040
IdRef : 069994293

GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Gael Gautier : Connect in order to contact the contributor

https://hal-univ-tours.archives-ouvertes.fr/hal-01740927

Submitted on : Thursday, March 22, 2018-3:10:15 PM

Last modification on : Friday, January 14, 2022-5:10:02 PM

Dates and versions

hal-01740927 , version 1 (22-03-2018)

Identifiers

HAL Id : hal-01740927 , version 1
DOI : 10.1109/TED.2017.2786143

Cite

Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩

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