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Journal articles
Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC
Bin Lu 1
Author
Samuel Menard 2
Mail :
Author
Benjamin Morillon 3
Mail :
Author
Daniel Alquier 1
Mail :
Author IdHAL : daniel-alquier IdRef : https://www.idref.fr/128188308 ORCID : https://orcid.org/0000-0003-1345-8195
Gael Gautier 1
Mail :
Author IdHAL : gael-gautier IdRef : https://www.idref.fr/069994293 ORCID : https://orcid.org/0000-0002-6854-7040
1
GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (Bât. E, 20 avenue Monge, 37200 Tours - France)
- Université de Tours (60 rue du Plat d'Étain, 37020 Tours cedex 1 - France)
- INSA CVL - Institut National des Sciences Appliquées - Centre Val de Loire (88 boulevard Lahitolle, CS 60013, 18022 Bourges cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7347 (France)
2
ST-TOURS - STMicroelectronics [Tours] (10 rue Thalès de Milet, 37071 Tours Cedex 2 - France)
3
STMicroelectronics (France)
Document type :
Journal articles
Complete list of metadatas
https://hal-univ-tours.archives-ouvertes.fr/hal-01740927
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 3:10:15 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:42 PM
Contributor : Gael Gautier <>
Submitted on : Thursday, March 22, 2018 - 3:10:15 PM
Last modification on : Tuesday, November 19, 2019 - 4:47:42 PM
Identifiers
- HAL Id : hal-01740927, version 1
- DOI : 10.1109/TED.2017.2786143
Collections
UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL
Citation
Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩
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