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Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC

Bin Lu 1 Samuel Menard 2 Benjamin Morillon 3 Daniel Alquier 1 Gael Gautier 1 
1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
2 ST-TOURS - STMicroelectronics [Tours]
3 STMicroelectronics
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https://hal-univ-tours.archives-ouvertes.fr/hal-01740927
Contributor : Gael Gautier Connect in order to contact the contributor
Submitted on : Thursday, March 22, 2018 - 3:10:15 PM
Last modification on : Friday, January 14, 2022 - 5:10:02 PM

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UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL

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Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.655 - 659. ⟨10.1109/TED.2017.2786143⟩. ⟨hal-01740927⟩

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